Hersteller-Teilenummer. : | RN1505(TE85L,F) | RoHS Status : | Bleifrei / RoHS-konform |
---|---|---|---|
Hersteller / Marke : | Toshiba Semiconductor and Storage | Zustand des Lagers : | 158657 pcs Stock |
Beschreibung : | TRANS 2NPN PREBIAS 0.3W SMV | Liefern von : | Hongkong |
Datenblätte : | RN1505(TE85L,F).pdf | Versandweg : | DHL/Fedex/TNT/UPS/EMS |
Teil-Nr. | RN1505(TE85L,F) |
---|---|
Hersteller | Toshiba Semiconductor and Storage |
Beschreibung | TRANS 2NPN PREBIAS 0.3W SMV |
Bleifreier Status / RoHS Status | Bleifrei / RoHS-konform |
Verfügbare Menge | 158657 pcs |
Datenblätte | RN1505(TE85L,F).pdf |
Spannung - Kollektor-Emitter-Durchbruch (max) | 50V |
VCE Sättigung (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor-Typ | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Supplier Device-Gehäuse | SMV |
Serie | - |
Widerstand - Emitterbasis (R2) | 47 kOhms |
Widerstand - Basis (R1) | 2.2 kOhms |
Leistung - max | 300mW |
Verpackung | Cut Tape (CT) |
Verpackung / Gehäuse | SC-74A, SOT-753 |
Andere Namen | RN1505(TE85LF)CT |
Befestigungsart | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
Frequenz - Übergang | 250MHz |
detaillierte Beschreibung | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMV |
DC Stromgewinn (HFE) (Min) @ Ic, VCE | 80 @ 10mA, 5V |
Strom - Collector Cutoff (Max) | 100nA (ICBO) |
Strom - Kollektor (Ic) (max) | 100mA |
DIODE PIN 30V 50MA GMD2
DIODE PIN 60V UMD
TRANS 2NPN PREBIAS 0.3W SMV
RF TXRX MODULE WIFI
ULP WI-FI 802.11 B/G SURFACE MOU
DIODE PIN 60V 100MA VMD2
RF TXRX MODULE WIFI
TRANS 2NPN PREBIAS 0.1W ESV
TRANS 2NPN PREBIAS 0.3W SMV
DIODE PIN 60V 100MA EMD2 TR